CHA2097A_15 Datasheet, PDF (2/8 Pages) United Monolithic Semiconductors – 20-40GHz Variable Gain Amplifier

CHA2097a
20-40GHz Variable Gain Amplifier
Electrical Characteristics for Broadband Operation
Tamb = +25°C, Vd1,2,3 = 3.5V
Symbol
Parameter
Fop Operating frequency range (1)
Min Typ Max Unit
20
40
GHz
G
Small signal gain (1)
16
18
dB
∆G Small signal gain flatness (1)
±1.5
dB
Is
Reverse isolation (1)
40
dB
P1dB Output power at 1dB gain compression (1)
13
14
dBm
P03 Output power at 3dB gain compression
15
16
dBm
VSWRin Input VSWR (1)
3.0:1
VSWRout Output VSWR (1)
3.0:1
Gctrl Gain control dynamic
12
dB
Vdc DC voltage
Vd
Vg
Vctrl
3.5
4.0
V
-2.0
0.4
V
-2.0
0.4
V
Id
Bias current
140
200
mA
(1) These values are representative of on-wafer measurements that are made without bonding
wires at the RF ports.
Absolute Maximum Ratings
Tamb. = 25°C (1)
Symbol
Parameter
Values
Unit
Vd
Drain bias voltage
4.0
V
Id
Drain bias current
200
mA
Vg
Gate bias voltage
-2.0 to +0.4
V
Ta
Operating temperature range
-40 to +85
°C
Tstg
Storage temperature range
-55 to +155
°C
(1) Operation of this device above anyone of these parameters may cause permanent damage.
Ref. : DSCHA20978021-21 Jan 08
2/8
Specifications subject to change without notice
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