CHA2097A_15 Datasheet, PDF (1/8 Pages) United Monolithic Semiconductors – 20-40GHz Variable Gain Amplifier

CHA2097a
RoHS COMPLIANT
20-40GHz Variable Gain Amplifier
GaAs Monolithic Microwave IC
Description
The CHA2097a is a variable gain broadband
three-stage monolithic amplifier. It is designed
for a wide range of applications, from military to
commercial communication systems. The
backside of the chip is both RF and DC grounds.
This helps simplify the assembly process.
The circuit is manufactured with a pHEMT
process, 0.25µm gate length, via holes through
the substrate, air bridges and electron beam
gate lithography.
It is available in chip form.
Main Features
■ Broadband performances: 20-40GHz
■ 14dBm output power ( 1dB gain comp. )
■ 18dB ±1.5dB gain
■ 10dB gain control range.
■ Low DC power consumption, 140mA @ 3.5V
■ Chip size: 2.04 X 0.97 X 0.10 mm
In
Vctrl
Vd1
Vd23
Out
Vg1 Vg2 Vg3
25
20
15
10
5
0
-5
-10
-15
-20
-25
0
Typical on wafer measurements
S22
S11
10
20
30
40
50
60
frequency (GHz)
Main Characteristics
Tamb. = 25°C
Symbol
Parameter
Min Typ Max
Fop Operating frequency range
20
40
G
Small signal gain
16
18
Gctrl Gain control range
10
P1dB Output power at 1dB gain compression
13
14
Id
Bias current
140
200
ESD Protection : Electrostatic discharge sensitive device. Observe handling precautions !
Unit
GHz
dB
dB
dBm
mA
Ref. : DSCHA20978021-21 Jan 08
1/8
Specifications subject to change without notice
United Monolithic Semiconductors S.A.S.
Route Départementale 128 - B.P.46 - 91401 Orsay Cedex France
Tel. : [phone] - Fax : [phone]