CHA2069 Datasheet, PDF (2/8 Pages) United Monolithic Semiconductors – 18-31GHz Low Noise Amplifier

CHA2069
18-31GHz Low Noise Amplifier
Electrical Characteristics
Tamb = +25°C, Vd = +4,5V Pads:B=D=E=Gnd
Symbol
Parameter
Fop Operating frequency range
Min Typ Max Unit
18
31 Ghz
G
Gain (1)
18
22
dB
∆G Gain flatness (1)
± 1 ± 1.5 dB
NF Noise figure (1)
2.5
3.5
dB
VSWRin Input VSWR (1)
2.0:1 2.5:1
VSWRout Ouput VSWR (1)
2:0:1 2.5:1
IP3
P1dB
3rd order intercept point
Output power at 1dB gain compression
20
dBm
10
dBm
Id
Drain bias current (2)
55
75
mA
(1) These values are representative on-wafer measurements that are made without bonding wires
at the RF ports.
(2) This current is the typical value from the low noise low consumption biasing ( B & D & E
grounded ).
Absolute Maximum Ratings (3)
Tamb = +25°C
Symbol
Parameter
Values
Unit
Vd
Drain bias voltage (5)
5.0
V
Pin
Maximum peak input power overdrive (4)
+15
dBm
Top
Operating temperature range
-40 to +85
°C
Tstg Storage temperature range
-55 to +125
°C
(3) Operation of this device above anyone of these paramaters may cause permanent damage.
(4) Duration < 1s.
(5) See chip biasing options pp7
Ref. :DSCHA20699273 - 8-Sep-99
2/8
Specifications subject to change without notice
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