CHA2069-FAA_15 Datasheet, PDF (2/10 Pages) United Monolithic Semiconductors – 16-32GHz Low Noise Amplifier

CHA2069-FAA
16-32GHz Low Noise Amplifier
Electrical Characteristics
Tamb.= +25°C, Vd = +4.5V, Pads B=D=E=Gnd, C=F=NC.
Symbol
Parameter
Min Typ Max Unit
Fop
G
G
NF
IS11I
IS22I
Operating frequency range
Gain ⁽¹⁾
Gain flatness ⁽¹⁾
Noise figure ⁽¹⁾
Input return loss ⁽¹⁾
Output return loss ⁽¹⁾
16
32 GHz
22
dB
1
dB
2.5
dB
10
dB
10
dB
IP3
3rd order intercept point
20
dBm
P1dB
Output power at 1dB gain compression
10
dBm
Id
Drain bias current
55
75 mA
(1) _{These values are representative of on board measurements as defined on the drawing}
99622 (see below).
Absolute Maximum Ratings ⁽¹⁾
Tamb.= +25°C
Symbol
Parameter
Values
Unit
Vd
Drain bias voltage⁽³⁾
5
V
Id
Drain bias current
120
mA
Pin
Maximum peak input power overdrive ⁽²⁾
+15
dBm
Tj
Junction temperature
175
°C
Ta
Operating temperature range
-40 to +85
°C
Tstg Storage temperature range
-55 to +150
°C
(1) _{Operation of this device above anyone of these parameters may cause permanent}
damage.
(2) _{Duration < 1s.}
(3) _{See chip biasing options}
Ref. : DSCHA2069-FAA2356 - 21 Dec 12
2/10
Specifications subject to change without notice
Bât. Charmille - Parc SILIC - 10, Avenue du Québec - 91140 VILLEBON-SUR-YVETTE - France
Tel.: [phone] - Fax: [phone]