CHA2069-FAA_15 Datasheet, PDF (1/10 Pages) United Monolithic Semiconductors – 16-32GHz Low Noise Amplifier

CHA2069-FAA
16-32GHz Low Noise Amplifier
GaAs Monolithic Microwave IC in SMD package
Description
The CHA2069-FAA is a three-stage
self-biased wide band monolithic low noise
amplifier.
The circuit is manufactured with a standard
pHEMT process: 0.25µm gate length, via
holes through the substrate, air bridges and
electron beam gate lithography.
It is proposed in leadless surface mount
hermetic metal ceramic 6x6mm² package.
The overall power supply is of 4.5V/55mA.
The circuit is dedicated to space applications
and also well suited for a wide range of
microwave and millimetre wave applications
and systems.
UMS
A2069
YYWW
Main Features
■ Broadband performance 16-32GHz
■ 2.5dB typical Noise Figure
■ 20dBm 3^rd order intercept point
■ 22dB gain
■ Low DC power consumption
■ 6x6mm² metal ceramic hermetic package
30
25
20
15
10
+25 C
-40 C
+85 C
5
0
10
15
20
25
30
35
40
Frequency (GHz)
Main Electrical Characteristics
Tamb.= +25°C
Symbol
Parameter
Min Typ Max Unit
Fop
Operating frequency range
16
32 GHz
NF
Noise figure
2.5
dB
G
Small signal Gain
22
dB
ESD Protections: Electrostatic discharge sensitive device observe handling precautions!
Ref. : DSCHA2069-FAA2356 - 21 Dec 12
1/10
Specifications subject to change without notice
United Monolithic Semiconductors S.A.S.
Bât. Charmille - Parc SILIC - 10, Avenue du Québec - 91140 VILLEBON-SUR-YVETTE - France
Tel.: [phone] - Fax: [phone]