CHM1270A98F_15 Datasheet, PDF (1/8 Pages) United Monolithic Semiconductors – W-Band Dual Channel Transmitter/Receiver

CHM1270a98F
W-Band Dual Channel Transmitter/Receiver
GaAs Monolithic Microwave IC
Description
The CHM1270a98F is a dual channel
self-biased transmitter/receiver. One RF port
used for reception and one for both emission
and reception. This product is designed for
optimum IF noise performances.
This circuit is well adapted to the sensors
system at W-Band, such as automotive long
range radar and industrial sensors.
This circuit is manufactured with the BES
MMIC process: 1 µm very high Ft Schottky
diode device, air bridges, via holes through
the substrate.
It is available in chip form with BCB top layer
protection.
Main Features
■ Very low 1/f noise
■ High LO/AM noise rejection
■ Low conversion loss
■ IF from DC to 100MHz
■ No DC bias required for mixer
■ On chip temperature sensor embedded
■ ESD strengthened
■ Chip size: 2.95 x 2.00 x 0.10mm
Vtemp
LO
RFa / Tx
0°
76. 5GHz
90°
RFb
Rx
BES
IFa
IFb
Transmitter/Receiver block diagram
20
18
16
14
12
10
8
6
4
2
0
74,5 75 75,5 76 76,5 77 77,5 78 78,5
F_lo (GHz)
On wafer typical IFa_Lc measurement
Main Electrical Characteristics
Tamb.= +25°C
Symbol
Parameter
F_LO, F_RF RF & LO Frequency range
F_IF IF Frequency range
Lc_IFa
Lc_IFb
IFa conversion loss
IFb conversion loss
N_IF IF port noise power @ IF=100kHz
Min Typ Max Unit
76
77
GHz
DC
100 MHz
11.0
dB
7.5
dBm
-162
dBm/Hz
Ref. : DSCHM1270a2352 - 17 Dec 12
1/8
Specifications subject to change without notice
United Monolithic Semiconductors S.A.S.
Bât. Charmille - Parc SILIC - 10, Avenue du Québec - 91140 VILLEBON-SUR-YVETTE - France
Tel.: [phone] - Fax: [phone]