CHA3092 Datasheet, PDF (1/7 Pages) United Monolithic Semiconductors – 20-33GHz Medium Power Amplifier

CHA3092
20-33GHz Medium Power Amplifier
GaAs Monolithic Microwave IC
Description
The CHA3092 is a high gain broadband four-
stage monolithic medium power amplifier. It is
designed for a wide range of applications, from
military to commercial communication
systems. The backside of the chip is both RF
and DC grounds. This helps simplify the
assembly process.
A B.I.T. ( Build In Test ) monitors a DC voltage
that is representative of the microwave output
power.
The circuit is manufactured with a PM-HEMT
process, 0.25µm gate length, via holes through
the substrate, air bridges and electron beam
gate lithography.
It is available in chip form.
Main Features
■ Broadband performances : 20-33GHz
■ 20dBm output power.
■ 22dB ±1.0dB gain
■ Very good broadband input matching
■ On chip output power level DC detector
■ Low DC power consumption, 300mA @ 3.5V
■ Chip size : 0.88 X 1.72 X 0.10 mm
Vd1
Vd2,3,4
IN
DI
OUT
Vg1 Vg2
Vg3,4
Vdet
Typical on wafer measurements :
Input Rloss : solid line & output Rloss : dash line.
Main Characteristics
Tamb. = 25°C
Symbol
Fop
G
Parameter
Operating frequency range
Small signal gain
P03
Output power at 3dB gain compression
Id_small signal Bias current
Min Typ Max Unit
20
33
GHz
20
22
dB
20
23
dBm
300
400
mA
ESD Protection : Electrostatic discharge sensitive device. Observe handling precautions !
Ref. :DSCHA30920356 21-Dec.-00
1/7
Specifications subject to change without notice
United Monolithic Semiconductors S.A.S.
Route Départementale 128 - B.P.46 - 91401 Orsay Cedex France
Tel. : [phone] - Fax : [phone]