STS2306 Datasheet, PDF (3/3 Pages) SamHop Microelectronics Corp. – N-Channel E nhancement Mode Field Effect Transistor

Product specification
S TS 2306
5 ^{E LE CTR ICAL CHAR ACTE R IS TICS (TA=25 C unless otherwise noted)}
P a ra meter
S ymbol Condition
DRAIN-SOURCE DIODE CHARACTERISTICS ^b
Diode Forward Voltage
VSD VGS = 0V, Is =1.25A
Min Typ^C Max Unit
0.84 1.3 V
Notes
a.S urface Mounted on FR 4 Board, t 10sec.
b.Pulse Test:Pulse Width 300us, Duty Cycle 2%.
c.Guaranteed by design, not subject to production testing.
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