STS2306 Datasheet, PDF (1/3 Pages) SamHop Microelectronics Corp. – N-Channel E nhancement Mode Field Effect Transistor

Product specification
S TS 2306
P R ODUC T S UMMAR Y
VDS S
ID
R DS (ON) ( m ) Max
45 @ VGS = 4.5V
20V
2.8A
60 @ V G S =2.5V
F E AT UR E S
S uper high dense cell design for low R DS(ON).
R ugged and reliable.
S OT-23 package.
S OT-23
D
S
G
D
G
S
ABS OLUTE MAXIMUM R ATINGS (TA=25 C unless otherwise noted)
P arameter
S ymbol
Limit
Unit
Drain-S ource Voltage
VDS
20
V
Gate-S ource Voltage
VGS
8
V
Drain C urrent-C ontinuous ^a @ TJ=125 C
ID
-P ulsed ^b
IDM
2.8
A
12
A
Drain-S ource Diode Forward C urrent ^a
IS
1.25
A
Maximum P ower Dissipation ^a
PD
1.25
W
Operating Junction and S torage
Temperature R ange
TJ, TSTG
-55 to 150
C
THE R MAL CHAR ACTE R IS TICS
Thermal R esistance, Junction-to-Ambient ^a
R thJA
100
C /W
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