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| STC2200 Datasheet, PDF (3/3 Pages) SamHop Microelectronics Corp. – N-Channel E nhancement Mode Field Effect Transistor | |||
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Product specification
S TC2200
5 E LE CTR ICAL CHAR ACTE R IS TICS (TA=25 C unless otherwise noted)
P a ra meter
S ymbol Condition
DRAIN-SOURCE DIODE CHARACTERISTICS b
Diode Forward Voltage
VSD
VGS = 0V, Is =1A
Min TypC Max Unit
0.83 1.2 V
Notes
a.S urface Mounted on FR 4 Board, t 10sec.
b.Pulse Test:Pulse Width 300us, Duty Cycle 2%.
c.Guaranteed by design, not subject to production testing.
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