STC2200 Datasheet, PDF (2/3 Pages) SamHop Microelectronics Corp. – N-Channel E nhancement Mode Field Effect Transistor

Product specification
S TC2200
E LE CTR ICAL CHAR ACTE R IS TICS (TA =25 C unless otherwise noted)
P a ra meter
S ymbol Condition
Min Typ ^C Max Unit
OFF CHARACTERISTICS
Drain-S ource Breakdown Voltage
Zero Gate Voltage Drain C urrent
Gate-Body Leakage
ON CHARACTERISTICS ^b
BVDSS ^VGS =0V, ^ID =250uA
20
IDSS
VDS =16V, VGS =0V
IGSS
VGS ₌ 10V, VDS= 0V
V
1 uA
100 nA
Gate Threshold Voltage
VGS(th) VDS =VGS, ID = 250uA 0.5 0.8 1.5 V
Drain-S ource On-S tate R esistance
R DS(ON)
VGS =4.5V, ID =2A
VGS = 2.5V, ID= 1A
60 85 ^m-ohm
85 ^{110 m-ohm}
On-S tate Drain Current
ID(ON) VDS = 5V, VGS = 4.5V
6
A
Forward Transconductance
g_FS
VDS = 5V, ID=2.3A
7
S
DYNAMIC CHARACTERISTICS ^c
Input Capacitance
C IS S
Output Capacitance
COSS
R everse Transfer Capacitance
CRSS
SWITCHING CHARACTERISTICS ^c
VDS =10V, VGS = 0V
f =1.0MHZ
210
PF
75
PF
46
PF
Turn-On Delay Time
R ise Time
Turn-Off Delay Time
tD(ON) _{VDD = 10V,}
tr
ID = 1A,
VGS = 4.5V,
tD(OFF) _{R GEN = 6 ohm}
13.2
ns
9.1
ns
27.3
ns
Fall Time
tf
15.9
ns
Total Gate C harge
Gate-S ource Charge
Gate-Drain C harge
Qg
Qgs
VDS =10V, ID = 2A,
VGS =4.5V
Qgd
4.2
nC
0.88
nC
1.53
nC
http://www.twtysemi.com
[e-mail]
4008-318-123
2 of 3