FML10 Datasheet, PDF (3/3 Pages) Rohm – General purpose transistor (isolated transistor and diode)

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■ Typical Characteristics
Product specification
FML10
Tr1
1000
Ta=100°C
Ta=25°C
100
Ta= −40°C
10
0.001
VCE=2V
Pulsed
0.01
0.1
1
10
COLLECTOR CURRENT : IC (A)
Fig.1 DC current gain
vs. collector current
10
Ta= −40°C
Ta=25°C
VBE(sat)
Ta=100°C
1
IC/IB=20 /1
Pulsed
0.1
0.01
VCE(sat)
Ta=100°C
Ta=25°C
Ta= −40°C
1
0.1
IC/IB=50/1
0.01 _IC/IB=20/1
IC/IB=10/1
Ta=25°C
VCE=2V
0.001
0.001
0.01
0.1
1
10
COLLECTOR CURRENT : IC (A)
Fig.2 Collector-emitter saturation voltage
base-emitter saturation voltage
vs. collector current
0.001
0.001
0.01
0.1
1
10
COLLECTOR CURRENT : IC (A)
Fig.3 Collector-emitter saturation voltage
vs. collector current
10
1
Ta=100°C
0.1
VCE=2V
Pulsed
1000
Ta=25°C
100
0.01
Ta= −40°C
0.001
0
0.5
1.0
1.5
BASE TO EMITTER VOLTAGE : VBE (V)
Fig.4 Grounded emitter propagation
characteristics
10
−0.001
VCE=2V
Ta=25°C
Pulsed
−0.01
−0.1
−1
−10
EMITTER CURRENT : IE (A)
Fig.5 Gain bandwidth product
vs. emitter current
1000
100
10
IC=20 IB1=-20IB2
Ta=25°C
tstg ^f=100MHz
tr
tf
tdon
1
0.001
0.01
0.1
1
COLLECTOR CURRENT : IC (A)
Fig.6 Switching time
100
IE=0A
Cib
f=1MHz
Ta=25°C
Cob
10
1
0.1
1
10
100
EMITTER TO BASE VOLTAGE : VEB (V)
COLLECTOR TO BASE VOLTAGE : VCB (V)
Fig.7 Collector output capacitance
vs. collector-base voltage
Emitter input capacitance
vs. emitter-base voltage
Di2
10
1
100m
10m
Ta^=125°C
1m
0.1m
0
0.1 0.2 0.3 0.4 0.5 0.6
FORWARD VOLTAGE : VF (V)
Fig.8 Forward characteristics
Di2
1000m
100m
10m
Ta=125°C
1m
100µ
10µ
Ta=25°C
1µ
Ta= −25°C
0.1µ
0 10 20 30 40 50 60 70
REVERSE VOLTAGE : VR (V)
Fig.9 Reverse characteristics
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