FML10 Datasheet, PDF (2/3 Pages) Rohm – General purpose transistor (isolated transistor and diode)

SSMMDD TTyyppee
■ Electrical Characteristics Ta = 25℃
Parameter
Symbol
Test conditions
Transistor TR1
Collector-Base Breakdown Voltage
V(BR)CBO IC = 10 μA, IE = 0
Collector-Emitter Breakdown Voltage
V(BR)CEO IC = 1 mA, IB = 0
Emitter-Base Breakdown Voltage
V(BR)EBO IC = 10 μA, IC = 0
Collector cutoff current
ICBO VCB=15V, IE=0
Emitter cutoff current
IEBO VEB=6V, IC=0
DC current gain
hFE VCE=2V, IC= 200mA
collector-emitter saturation voltage *
Transition frequency
Collector output capacitance
Di2
VCE(sat)
fT
Cob
IC = 500 mA; IB = 25 mA
IC = 200 mA; VCE = 2 V; f = 100 MHz
VCB=10V, IE=0A, f=1MHz
Forward voltage
Reverse current
VF _IF=700mA
IR VR=20V
* pulse test: Pulse Width ≤300μs, Duty Cycle≤ 2.0%.
■ Marking
Marking
L10
TTrraannDssioiissdttIooeCrrsss
Product specification
FML10
Min Typ Max Unit
15
V
12
V
6
V
100 nA
100 nA
270
680
0.2 V
400
MHz
12
pF
490 mV
200 μA
http://www.twtysemi.com
[e-mail]
4008-318-123
2 of 3