CJ1012 Datasheet, PDF (3/3 Pages) ZP Semiconductor – SOT-523 Plastic-Encapsulate MOSFETS

5
T =25℃
a
Pulsed
4
3
2
Output Characteristics
5.5V
4.5V
3.5V
2.5V
1
V =1.5V
GS
0
0.0
0.5
1.0
1.5
2.0
2.5
3.0
DRAIN TO SOURCE VOLTAGE V (V)
DS
600
500
400
300
200
100
0
100
200
R
——
DS(ON)
I
D
T =25℃
a
Pulsed
V =2.5V
GS
V =4.5V
GS
400
600
800
DRAIN CURRENT I (mA)
D
500
T =25℃
a
Pulsed
100
I
S
——
V
SD
10
1
0.1
0.4
0.6
0.8
1.0
1.2
SOURCE TO DRAIN VOLTAGE V (V)
SD
CJ1012
Product specification
500
V =16V
DS
Pulsed
400
Transfer Characteristics
300
T =100℃
a
200
T =25℃
a
100
0
0.0
0.5
1.0
1.5
2.0
2.5
3.0
GATE TO SOURCE VOLTAGE V (V)
GS
R
DS(ON)
——
V
GS
500
T =25℃
a
Pulsed
400
I =600mA
D
300
200
1
0.85
0.80
0.75
0.70
0.65
0.60
25
2
3
4
5
GATE TO SOURCE VOLTAGE V (V)
GS
Threshold Voltage
I =250uA
D
50
75
100
125
JUNCTION TEMPERATURE T (℃)
J
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