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| CJ1012 Datasheet, PDF (1/3 Pages) ZP Semiconductor – SOT-523 Plastic-Encapsulate MOSFETS | |||
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Product specification
SOT-523 Plastic-Encapsulate MOSFETS
CJ1012 N-Channel Power MOSFET
General Description
This Single N-Channel MOSFET has been designed using advanced
Power Trench process to optimize the RDS(ON).
FEATURE
ï¬ High-Side Switching
ï¬ Low On-Resistance
ï¬ Low Threshold
ï¬ Fast Switching Speed
ï¬ ESD protected up to 2KV
SOT-523
1. GATE
2. SOURCE
3. DRAIN
APPLICATIONS
ï¬ Drivers:Relays, Solenoids, Lamps, Hammers, Displays, Memories
ï¬ Battery Operated Systems
ï¬ Power Supply Converter Circuits
ï¬ Load/Power Switching Cell Phones, Pagers
Maximum ratings (Ta=25â unless otherwise noted)
Parameter
Drain-Source voltage
Gate-Source Voltage
Drain Current-Continuous
Drain Current -Pulsed(note1)
Power Dissipation (note 2 , Ta=25â)
Maximum Power Dissipation (note 3 , Tc=25â)
Thermal Resistance from Junction to Ambient
Thermal Resistance from Junction to Case
Storage Temperature
Junction Temperature
Symbol
VDSS
VGS
ID(DC)
IDM(pulse)
PD
RθJA
RθJC
Tj
Tstg
Value
20
±12
500
1000
150
275
833
455
150
-55 ~+150
Units
V
mA
mW
â/W
â
http://www.twtysemi.com
sales@twtysemi.com
4008-318-123
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