UMD6N Datasheet, PDF (2/2 Pages) SeCoS Halbleitertechnologie GmbH – Dual NPN+PNP Digital Transistors

Product specification
EMD6 / UMD6N / IMD6A
!Electrical characteristics (Ta = 25°C)
Parameter
Symbol Min. Typ. Max. Unit
Conditions
Collector-base breakdown voltage BVCBO 50 − − V IC=50µA
Collector-emitter breakdown voltage BVCEO 50 − − V IC=1mA
Emitter-base breakdown voltage
BVEBO 5 − − V IE=50µA
Collector cutoff current
ICBO
−
− 0.5 µA VCB=50V
Emitter cutoff current
IEBO
−
− 0.5 µA VEB=4V
Collector-emitter saturation voltage VCE (sat) − − 0.3 V IC/IB=5mA/0.25mA
DC current transfer ratio
Transition frequency
hFE 100 250 600 − VCE=5V, IC=1mA
fT
− 250 − MHz VCE=10mA, IE=−5mA, f=100MHz ∗
Input resistance
R1 3.29 4.7 6.11 kΩ
−
∗ Transition frequency of the transistor
!Packaging specifications
Package
Code
Type
Basic ordering
unit (pieces)
EMD6
UMD6N
IMD6A
T2R
8000
Taping
TR
T148
3000
3000
http://www.twtysemi.com
[e-mail]
4008-318-123
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