UMD6N Datasheet, PDF (1/2 Pages) SeCoS Halbleitertechnologie GmbH – Dual NPN+PNP Digital Transistors

Product specification
EMD6 / UMD6N / IMD6A
!Features
1) Both the DTA143T chip and DTC143T chip in an EMT
or UMT or SMT package.
2) Mounting possible with EMT3 or UMT3 or SMT3
automatic mounting machines.
3) Transistor elements are independent, eliminating
interference.
4) Mounting cost and area can be cut in half.
!Structure
A PNP and NPN digital transistor
(each with a single built in resistor)
The following characteristics apply to both the DTr1 and
DTr2, however, the “ −” sign on DTr2 values for the PNP
type have been omitted.
!Equivalent circuit
EMD6 / UMD6N
(3) (2) (1)
R1
DTr2
DTr1
R1=4.7kΩ
R1
(4) (5) (6)
IMD6A
(4) (5) (6)
R1
DTr2
DTr1
R1 R1=4.7kΩ
(3) (2) (1)
!Absolute maximum ratings (Ta = 25°C)
Parameter
Symbol
Limits
Collector-base voltage
VCBO
50
Collector-emitter voltage
VCEO
50
Emitter-base voltage
VEBO
5
Collector current
IC
100
Collector _{EMD6, UMD6N}
150 (TOTAL)
power
PC
dissipation ^IMD6A
300 (TOTAL)
Junction temperature
Tj
150
Storage temperature
Tstg
∗1 120mW per element must not be exceeded.
∗2 200mW per element must not be exceeded.
−55∼+150
Unit
V
V
V
mA
∗¹
mW
∗²
˚C
˚C
!External dimensions (Units : mm)
EMD6
(4)
(3)
(5)
(2)
(6)
(1)
1.2
1.6
Each lead has same dimensions
ROHM : EMT6
Abbreviated symbol : D6
EMD6N
1.25
2.1
0.1Min.
ROHM : UMT6
EIAJ : SC-88
Each lead has same dimensions
Abbreviated symbol : D6
IMD6A
1.6
2.8
0.3to0.6
Each lead has same dimensions
ROHM : SMT6
EIAJ : SC-74
Abbreviated symbol : D6
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