UM6J1NTN Datasheet, PDF (2/2 Pages) Rohm – 4V Drive Pch MOSFET

zElectrical characteristics (Ta=25°C)
<It is the same characteristics for Tr1 and Tr2.>
Parameter
Symbol Min. Typ. Max. Unit
Conditions
Gate-source leakage
IGSS
−
− ±10 µA VGS=±20V, VDS=0V
Drain-source breakdown voltage V(BR) DSS −30 −
−
V ID= −1mA, VGS=0V
Zero gate voltage drain current IDSS
−
−
−1 µA VDS= −30V, VGS=0V
Gate threshold voltage
VGS (th) −1.0 − −2.5 V VDS= −10V, ID= −1mA
−
Static drain-source on-state
resistance
RDS
∗
(on)
−
0.9 1.4
1.4 2.1
− 1.6 2.4
Forward transfer admittance
Yfs ^∗ 0.2
−
−
Ω ID= −0.2A, VGS= −10V
Ω ID= −0.15A, VGS= −4.5V
Ω ID= −0.15A, VGS= −4V
S VDS= −10V, ID= −0.15A
Input capacitance
Ciss
−
30
−
pF VDS= −10V
Output capacitance
Coss
−
4
−
pF VGS=0V
Reverse transfer capacitance Crss
−
5
− pF f=1MHz
Turn-on delay time
Rise time
Turn-off delay time
Fall time
td (on) ^∗
−
8
−
ns VDD −15V
tr ^∗
−
td (off) ^∗
−
5
30
−
−
ns ^{ID= −0.15A}
VGS= −10V
ns _{RL 100Ω}
tf ^∗ −
40
−
ns RG=10Ω
∗ Pulsed
zBody diode characteristics (source-drain)
Parameter
Forward voltage
∗Pulsed
Symbol Min. Typ. Max. Unit
Conditions
VSD ^∗
−
− −1.2 V IS= −0.1A, VGS=0V
Product specification
UM6J1N
http://www.twtysemi.com
[e-mail]
4008-318-123
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