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UM6J1NTN Datasheet, PDF (1/2 Pages) Rohm – 4V Drive Pch MOSFET | |||
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Product specification
UM6J1N
zStructure
TY P-channel MOSFET
zFeatures
1) Two RSU002P03 transistors in a single UMT package.
2) The MOSFET elements are independent, eliminating
mutual interference.
3) Mounting cost and area can be cut in half.
zApplications
Switching
zDimensions (Unit : mm)
UMT6
2.0
1.3
0.9
0.65
0.65
0.7
(5)
(6)
(4)
1pin mark
(1)
(3)
(2)
0.2
0.15
Each lead has same dimensions
Abbreviated symbol : J01
zPackaging specifications
Type
UM6J1N
Package
Code
Basic ordering unit (pieces)
Taping
TN
3000
zInner circuit
(6)
(5)
(4)
â1
â2
â2
â1
(1)
(2)
(3)
â1 ESD PROTECTION DIODE
â2 BODY DIODE
(1) Tr1 Source
(2) Tr1 Gate
(3) Tr2 Drain
(4) Tr2 Source
(5) Tr2 Gate
(6) Tr1 Drain
zAbsolute maximum ratings (Ta=25°C)
<It is the same ratings for Tr1 and Tr2.>
Parameter
Drain-source voltage
Gate-source voltage
Drain current
Continuous
Pulsed
Symbol
VDSS
VGSS
ID
IDP â1
Total power dissipation
PD â2
Channel temperature
Range of storage temperature
â1 Pwâ¤10µs, Duty cycleâ¤1%
â2 Each terminal mounted on a recommended land
Tch
Tstg
Limits
â30
±20
±0.2
±0.4
150
120
150
â55 to +150
Unit
V
V
A
A
mW / TOTAL
mW / ELEMENT
°C
°C
zThermal resistance
Parameter
Channel to ambient
â Each terminal mounted on a recommended land
Symbol
Rth(ch-a) â
Limits
833
1042
Unit
°C/W / TOTAL
°C/W / ELEMENT
http://www.twtysemi.com
sales@twtysemi.com
4008-318-123
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