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| TIP29C Datasheet, PDF (2/2 Pages) Inchange Semiconductor Company Limited – isc Silicon NPN Power Transistors | |||
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Emitter cut-off current
DC current gain
Collector-emitter voltage
Base-emitter saturation voltage
IEBO
hFE(1)*
hFE(2)*
VCE(sat)*
VBE*
Transition frequency
fT
*Pulse test: pulse width â¤300μs, duty cycle⤠2.0%.
VEB=5V,IC=0
VCE=4V, IC=0.2A
VCE=4V, IC=1A
IC=1A,IB=125mA
VCE=4V,IC=1A
VCE=10V,IC=200mA
Product specification
1
mA
40
15
75
0.7
V
1.3
V
3
MHz
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