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| TIP29C Datasheet, PDF (1/2 Pages) Inchange Semiconductor Company Limited – isc Silicon NPN Power Transistors | |||
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Product specification
TO-126 Plastic-Encapsulate Transistors
TIP29 Series TRANSISTOR (NPN)
FEATURES
z Designed for Use in General Purpose Amplifier and Switching
Applications
TO â 126
1. BASE
2. COLLECTOR
3. EMITTER
MAXIMUM RATINGS (Ta=25â unless otherwise noted)
Symbol
VCBO
VCEO
VEBO
IC
ICP
PC
RθJA
Tj
Tstg
Parameter
Collector-Base Voltage
TIP29
TIP29A
TIP29B
TIP29C
Collector-Emitter Voltage
TIP29
TIP29A
TIP29B
TIP29C
Emitter-Base Voltage
Collector Current(DC)
Collector Current(Pulse)
Collector Power Dissipation
Thermal Resistance From Junction To Ambient
Junction Temperature
Storage Temperature
Value
40
60
80
100
40
60
80
100
5
1
3
1.25
100
150
-55~+150
Unit
V
V
V
A
A
W
â/W
â
â
ELECTRICAL CHARACTERISTICS (Ta=25â unless otherwise specified)
Parameter
Symbol
Test conditions
Min Typ Max Unit
Collector-base breakdown voltage
V(BR)CBO
IC=100µA,IE=0
TIP29
40
TIP29A
V
TIP29B
TIP29C
Collector-emitter breakdown voltage
V(BR)CEO
IC=30mA,IB=0
TIP29
40
TIP29A
60
V
TIP29B
80
TIP29C
100
Emitter-base breakdown voltage
V(BR)EBO
IE=100µA,IC=0
5
V
Collector cut-off current
VCE=30V,IB=0
TIP29/29A
ICEO
VCE=60V,IB=0
TIP29B/29C
0.3
mA
VCE=40V,VEB=0
TIP29
200
Collector cut-off current
VCE=60V,VEB=0
TIP29A
ICES
VCE=80V,VEB=0
TIP29B
200
µA
200
VCE=100V,VEB=0
TIP29C
200
http://www.twtysemi.com
sales@twtysemi.com
4008-318-123
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