STBV32 Datasheet, PDF (2/2 Pages) STMicroelectronics – HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTOR

700
COMMON
EMITTER
600
T =25℃
a
500
400
300
Static Characteristic
30mA
27mA
24mA
21mA
18mA
15mA
12mA
200
9mA
100
0
0
6mA
I =3mA
B
1
2
3
4
5
COLLECTOR-EMITTER VOLTAGE V (V)
CE
V
——
BEsat
I
c
β=4,T =25℃
a
800
β=5,T =25℃
a
600
β=5,T =100℃
a
β=4,T =100℃
a
400
1
10
100
1000
COLLECTOR CURREMT I (mA)
C
I —— V
C
BE
1000
COMMON EMITTER
V =2V
CE
100
10
1
STBV32/B
Product specification
h —— I
100
FE
C
COMMON EMITTER
V = 2V
CE
T =100℃
a
T =25℃
a
10
1
1
1000
10
100
1000
COLLECTOR CURRENT I (mA)
C
V
——
CEsat
I
C
β=5,T =100℃
a
β=4,T =100℃
a
β=3,T =100℃
a
100
β=3,T =25℃
a
β=5,T =25℃
a
β=4,T =25℃
a
10
1
10
100
1000
COLLECTOR CURRENT I (mA)
C
f —— I
T
C
10
COMMON EMITTER
VCE=10V
T =25℃
8
a
6
4
2
0.1
0
1000
100
200
400
600
800
1000
BASE-EMMITER VOLTAGE V (V)
BE
C /C — — V /V
ob ib
CB EB
f=1MHz
I =0/I =0
C
C
E
ib
T =25 ℃
a
0
20
1200
1000
800
600
C
ob
10
400
200
1
0.1
1
0
10
30
0
COLLECTOR-BASE VOLTAGE V /V (V)
CB EB
http://www.twtysemi.com
[e-mail]
40
60
80
100
120
COLLECTOR CURRENT I (mA)
C
P —— T
C
a
25
50
75
100
125
AMBIENT TEMPERATURE T (℃)
a
4008-318-123
150
2 of 2