STBV32 Datasheet, PDF (1/2 Pages) STMicroelectronics – HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTOR

Product specification
TO-92 Plastic-Encapsulate Transistors
STBV32/B TRANSISTER (NPN)
FEATURES
z Medium Voltage Capability
z Low Spread of Dynamic Parameters
z Minimum Lot-to-lot Spread for Reliable Operation
z Very High Switching Speed
APPLICATIONS
z Electronic Ballasts for Fluorescent Lighting
TO – 92
1.EMITTER
2.COLLECTOR
3.BASE
MAXIMUM RATINGS (T_a=25℃ unless otherwise noted)
Symbol
V_CBO
V_CEO
V_EBO
I_C
P_C
R_ΘJA
T_j
T_stg
Parameter
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
Collector Power Dissipation
Thermal Resistance From Junction To Ambient
Junction Temperature
Storage Temperature
Value
700
400
9
1
1.1
114
150
-55~+150
Unit
V
V
V
A
W
℃/W
℃
℃
ELECTRICAL CHARACTERISTICS (T_a=25℃ unless otherwise specified)
Parameter
Symbol
Collector-base breakdown voltage
Collector-emitter breakdown voltage
V_(BR)CBO^*
V_(BR)CEO^*
Emitter-base breakdown voltage
V_(BR)EBO
Collector cut-off current
I_CEO
Emitter cut-off current
DC current gain
Collector-emitter saturation voltage
Base-emitter saturation voltage
I_EBO
h_FE(1) ^*
h_FE(2) ^*
V_CE(sat)(1) ^*
V_CE(sat)(2) ^*
V_CE(sat)(3) ^*
V_{BE (sat)(1)} ^*
V_{BE (sat)(2)} ^*
*Pulse test: pulse width ≤300μs, duty cycle≤ 1.5%.
Test conditions
I_C=1mA, I_E=0
I_C=10mA, I_B=0
I_E=10mA, I_C=0
V_BE=-1.5V, V_CE=700V
V_EB=7V, I_C=0
V_CE=2V, I_C=0.5A
V_CE=2V, I_C=1A
I_C=0.5A, I_B=0.1A
I_C=1 A, I_B=0.25A
I_C=1.5A, I_B=0.5A
I_C=0.5A, I_B=0.1A
I_C=1A, I_B=0.25A
MIN
700
400
9
8
5
TYP
MAX
1
100
35
25
0.5
1
1.5
1
1.2
UNIT
V
V
V
mA
μA
V
V
V
V
V
http://www.twtysemi.com
[e-mail]
4008-318-123
1 of 2