SSM6J08FU Datasheet, PDF (2/2 Pages) Toshiba Semiconductor – TOSHIBA Field Effect Transistor Silicon P Channel MOS Type (U-MOSII)

Product specification
SSM6J08FU
Electrical Characteristics (Ta = 25°C)
Characteristic
Gate leakage current
Drain-Source breakdown voltage
Drain Cut-off current
Gate threshold voltage
Forward transfer admittance
Drain-Source ON resistance
Input capacitance
Reverse transfer capacitance
Output capacitance
Switching time
Turn-on time
Turn-off time
Note 3: Pulse test
Symbol
Test Condition
Min Typ. Max Unit
I_GSS
V_GS = ±12 V, V_DS = 0
¾
¾
±1
mA
V _{(BR) DSS}
V _{(BR) DSX}
I_D = -1 mA, V_GS = 0
I_D = -1 mA, V_GS = 12 V
-20
¾
¾
V
-8
¾
¾
I_DSS
V_DS = -20 V, V_GS = 0
¾
¾
-1
mA
V_th
V_DS = -3 V, I_D = -0.1 mA
-0.5 ¾ -1.1
V
½Y_fs½
V_DS = -3 V, I_D = -0.65 A
(Note 3) 1.3
2.7
¾
S
I_D = -0.65 A, V_GS = -4 V
(Note 3) ¾
140 180
R_{DS (ON)} I_D = -0.65 A, V_GS = -2.5 V (Note 3) ¾
200 260 mW
I_D = -0.65 A, V_GS = -2.0 V (Note 3) ¾
260 460
C_iss
V_DS = -10 V, V_GS = 0, f = 1 MHz
¾
370
¾
pF
C_rss
V_DS = -10 V, V_GS = 0, f = 1 MHz
¾
73
¾
pF
C_oss
V_DS = -10 V, V_GS = 0, f = 1 MHz
¾
116
¾
pF
t_on
V_DD = -10 V, I_D = -0.65 A,
¾
33
¾
ns
t_off
V_GS = 0~-2.5 V, R_G = 4.7 W
¾
47
¾
ns
Switching Time Test Circuit
(a) Test circuit
0
IN
I_D
OUT
-2.5 V
R_G
10 ms
V_DD
V_DD = -10 V
R_G = 4.7 W
D.U. ^<= 1%
V_IN: t_r, t_f < 5 ns
COMMON SOURCE
Ta = 25°C
(b) V_IN
(c) V_OUT
0V
-2.5 V
V_{DS (ON)}
V_DD
10%
90%
90%
10%
t_r
t_f
t_on
t_off
Precaution
Vth can be expressed as voltage between gate and source when low operating current value is ID = -100 mA
for this product. For normal switching operation, VGS (on) requires higher voltage than Vth and VGS (off)
requires lower voltage than Vth.
(relationship can be established as follows: VGS (off) < Vth < VGS (on))
Please take this into consideration for using the device.
VGS recommended voltage of -2.5 V or higher to turn on this product.
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