SSM6J08FU Datasheet, PDF (1/2 Pages) Toshiba Semiconductor – TOSHIBA Field Effect Transistor Silicon P Channel MOS Type (U-MOSII)

Power Management Switch
DC-DC Converter
Product specification
SSM6J08FU
Unit: mm
· Small Package
· Low on Resistance : Ron = 0.18 Ω (max) (@VGS = −4 V)
: Ron = 0.26 Ω (max) (@VGS = −2.5 V)
· Low Gate Threshold Voltage
Maximum Ratings (Ta = 25°C)
Characteristics
Symbol
Rating
Unit
Drain-Source voltage
V_DS
-20
V
Gate-Source voltage
V_GSS
±12
V
Drain current
DC
I_D
-1.3
A
Pulse
I_DP (Note 2)
-2.6
Drain power dissipation
P_D (Note 1)
300
mW
Channel temperature
T_ch
150
°C
Storage temperature range
T_stg
-55~150
°C
Note1: Mounted on FR4 board
(25.4 mm ´ 25.4 mm ´ 1.6 t, Cu Pad: 0.32 mm² ´ 6) Fig: 1.
Note2: The pulse width limited by max channel temperature.
Weight: 6.8 mg (typ.)
Marking
Equivalent Circuit
Fig 1: 25.4 mm ´ 25.4 mm ´ 1.6 t,
Cu Pad: 0.32 mm² ´ 6
654
KDD
654
0.4 mm
123
123
Handling Precaution
When handling individual devices (which are not yet mounted on a circuit board), be sure that the
environment is protected against electrostatic electricity. Operators should wear anti-static clothing, and
containers and other objects that come into direct contact with devices should be made of anti-static materials.
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