SSM6J06FU Datasheet, PDF (2/2 Pages) Toshiba Semiconductor – Power Management Switch High Speed Switching Applications

Product specification
SSM6J06FU
Electrical Characteristics (Ta = 25°C)
Characteristics
Gate leakage current
Drain-source breakdown voltage
Drain cut-off current
Gate threshold voltage
Forward transfer admittance
Drain-source ON resistance
Input capacitance
Reverse transfer capacitance
Output capacitance
Switching time
Turn-on time
Turn-off time
Note 2: Pulse test
Symbol
Test Condition
Min Typ. Max Unit
I_GSS
V_GS = ±12 V, V_DS = 0
¾
¾
±1
mA
V _{(BR) DSS} I_D = -1 mA, V_GS = 0
-20
¾
¾
V
I_DSS
V_DS = -20 V, V_GS = 0
¾
¾
-1
mA
V_th
V_DS = -3 V, I_D = -0.1 mA
-0.6 ¾ -1.1
V
ïY_fsï
V_DS = -3 V, I_D = -0.3 A
(Note 2) 0.6
¾
¾
S
R_{DS (ON)} ^{ID = -0.3 A, VGS = -4 V}
(Note 2) ¾
0.4
0.5
W
I_D = -0.3 A, V_GS = -2.5 V
(Note 2) ¾
0.55 0.7
C_iss
V_DS = -10 V, V_GS = 0, f = 1 MHz
¾
160
¾
pF
C_rss
V_DS = -10 V, V_GS = 0, f = 1 MHz
¾
25
¾
pF
C_oss
V_DS = -10 V, V_GS = 0, f = 1 MHz
¾
90
¾
pF
t_on
V_DD = -10 V, I_D = -0.3 A,
t_off
V_GS = 0~-2.5 V, R_G = 4.7 W
¾
27
¾
ns
¾
43
¾
Switching Time Test Circuit
Precaution
Vth can be expressed as voltage between gate and source when low operating current value is ID = -100 mA for
this product. For normal switching operation, VGS (on) requires higher voltage than Vth and VGS (off) requires lower
voltage than Vth.
(Relationship can be established as follows: VGS (off) < Vth < VGS (on))
Please take this into consideration for using the device.
VGS recommended voltage of -2.5 V or higher to turn on this product.
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