SSM6J06FU Datasheet, PDF (1/2 Pages) Toshiba Semiconductor – Power Management Switch High Speed Switching Applications

Power Management Switch
High Speed Switching Applications
· Small package
· Low on resistance : Ron = 0.5 Ω max (VGS = −4 V)
: Ron = 0.7 Ω max (VGS = −2.5 V)
· Low gate threshold voltage
Product specification
SSM6J06FU
Unit: mm
Maximum Ratings (Ta = 25°C)
Characteristics
Symbol
Rating
Unit
Drain-source voltage
Gate-source voltage
Drain current
DC
Pulse
Drain power dissipation (Ta = 25°C)
Channel temperature
Storage temperature range
V_DS
-20
V
V_GSS
±12
V
I_D
-650
mA
I_DP
-1300
P_D
300
mW
(Note 1)
T_ch
150
°C
T_stg
-55~150
°C
Note 1: Mounted on FR4 board.
(25.4 mm ´ 25.4 mm ´ 1.6 t, Cu pad: 0.32 mm² ´ 6) Figure 1.
Weight: 6.8 mg (typ.)
Marking
Equivalent Circuit
Handling Precaution
When handling individual devices (which are not yet mounting on a circuit board), be sure that the environment
is protected against electrostatic electricity. Operators should wear anti-static clothing, and containers and other
objects that come into direct contact with devices should be made of anti-static materials.
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