SSM3K09FU Datasheet, PDF (2/2 Pages) Toshiba Semiconductor – High Speed Switching Applications

SMD Type
Electrical Characteristics (Ta = 25°C)
Product specification
SSM3K09FU
Characteristics
Gate leakage current
Drain-Source breakdown voltage
Drain cut-off current
Gate threshold voltage
Forward transfer admittance
Drain-Source ON resistance
Input capacitance
Reverse transfer capacitance
Output capacitance
Switching time
Turn-on time
Turn-off time
Note2: Pulse test
Symbol
Test Condition
Min Typ. Max Unit
I_GSS
V_GS = ±16 V, V_DS = 0
⎯
⎯
±1
μA
V _{(BR) DSS} I_D = 1 mA, V_GS = 0
30
⎯
⎯
V
I_DSS
V_DS = 30 V, V_GS = 0
⎯
⎯
1
μA
V_th
V_DS = 5 V, I_D = 0.1 mA
1.1
⎯
1.8
V
⏐Y_fs⏐
V_DS = 5 V, I_D = 200 mA
(Note2) 270 ⎯
⎯
mS
I_D = 200 mA, V_GS = 10 V
(Note2) ⎯
0.5
0.7
R_{DS (ON)} I_D = 200 mA, V_GS = 4 V
(Note2) ⎯
0.8 1.2
Ω
I_D = 200 mA, V_GS = 3.3 V
(Note2) ⎯
1.0
1.7
C_iss
V_DS = 5 V, V_GS = 0, f = 1 MHz
⎯
20
⎯
pF
C_rss
V_DS = 5 V, V_GS = 0, f = 1 MHz
⎯
7
⎯
pF
C_oss
V_DS = 5 V, V_GS = 0, f = 1 MHz
⎯
16
⎯
pF
t_on
V_DD = 5 V, I_D = 200 mA,
⎯
72
⎯
ns
t_off
V_GS = 0~4 V
⎯
68
⎯
ns
Switching Time Test Circuit
(a) Test circuit
(b) V_IN
4V
Input
0
10 μs
V_DD = 5 V
D.U. ^<= 1%
Input: t_r, t_f < 5 ns
(Z_out = 50 Ω)
Common Source
Ta = 25°C
Output
V_{DD (c) VOUT}
4V
0V
V_DD
V_{DS (ON)}
10%
90%
10%
90%
t_r
t_f
t_on
t_off
Precaution
V_th can be expressed as voltage between gate and source when low operating current value is I_D = 100 μA for this
product. For normal switching operation, V_{GS (on)} requires higher voltage than V_th and V_GS (off) requires lower
voltage than V_th.
(relationship can be established as follows: V_{GS (off)} < V_th < V_{GS (on)} )
Please take this into consideration for using the device.
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