SSM3K09FU Datasheet, PDF (1/2 Pages) Toshiba Semiconductor – High Speed Switching Applications

SMD Type
Product specification
SSM3K09FU
Unit: mm
• Small package
• Low on resistance
: R_on = 0.7 Ω (max) (@V_GS = 10 V)
: R_on = 1.2 Ω (max) (@V_GS = 4 V)
Absolute Maximum Ratings (Ta = 25°C)
Characteristics
Symbol
Rating
Unit
Drain-Source voltage
V_DS
30
V
Gate-Source voltage
V_GSS
±20
V
Drain current
DC
I_D
Pulse
I_DP
400
mA
800
Drain power dissipation (Ta = 25°C) P_D (Note 1)
150
mW
Channel temperature
T_ch
150
°C
Storage temperature
T_stg
−55~150
°C
Note:
Using continuously under heavy loads (e.g. the application of
high temperature/current/voltage and the significant change in
temperature, etc.) may cause this product to decrease in the
reliability significantly even if the operating conditions (i.e.
Weight: 0.006 g (typ.)
operating temperature/current/voltage, etc.) are within the
absolute maximum ratings.
Please design the appropriate reliability upon reviewing the TY Semiconductor Reliability Handbook
(“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test
report and estimated failure rate, etc).
Note 1: Mounted on FR4 board
(25.4 mm × 25.4 mm × 1.6 t, Cu Pad: 0.6 mm² × 3) Figure 1.
Marking
3
DJ
Equivalent Circuit
(top view)
3
Figure 1: 25.4 mm × 25.4 mm × 1.6 t,
Cu Pad: 0.6 mm² × 3
0.6 mm
1.0 mm
1
2
1
2
Handling Precaution
When handling individual devices (which are not yet mounting on a circuit board), be sure that the environment is
protected against electrostatic electricity. Operators should wear anti-static clothing, and containers and other
objects that come into direct contact with devices should be made of anti-static materials.
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