SSM3K02T Datasheet, PDF (2/2 Pages) Toshiba Semiconductor – High Speed Switching Applications

SMD Type
Electrical Characteristics (Ta = 25°C)
Product specification
SSM3K02T
Characteristics
Gate leakage current
Drain-source breakdown voltage
Drain cut-off current
Gate threshold voltage
Forward transfer admittance
Drain-source ON resistance
Input capacitance
Reverse transfer capacitance
Output capacitance
Switching time
Turn-on time
Turn-off time
Note: Pulse test
Symbol
Test Condition
Min Typ. Max Unit
I_GSS
V_GS = ±10 V, V_DS = 0
⎯
⎯
±5
μA
V _{(BR) DSS} I_D = 1 mA, V_GS = 0
30
⎯
⎯
V
I_DSS
V_DS = 30 V, V_GS = 0
⎯
⎯
1
μA
V_th
V_DS = 3 V, I_D = 0.1 mA
0.6
⎯
1.1
V
⎪Y_fs⎪
V_DS = 3 V, I_D = 1.25 A
(Note) 2.2
⎯
⎯
S
R_{DS (ON)}
I_D = 1.25 A, V_GS = 4 V
I_D = 1.25 A, V_GS = 2.5 V
(Note) ⎯
(Note) ⎯
140 200
mΩ
180 250
C_iss
V_DS = 10 V, V_GS = 0, f = 1 MHz
⎯ 115 ⎯
pF
C_rss
V_DS = 10 V, V_GS = 0, f = 1 MHz
⎯
24
⎯
pF
C_oss
V_DS = 10 V, V_GS = 0, f = 1 MHz
⎯
60
⎯
pF
t_on
V_DD = 15 V, I_D = 0.5 A,
t_off
V_GS = 0~2.5 V, R_G = 4.7 Ω
⎯
52
⎯
ns
⎯
80
⎯
Switching Time Test Circuit
Precaution
V_th can be expressed as voltage between gate and source when low operating current value is I_D = 100 μA for this
product. For normal switching operation, V_{GS (ON)} requires higher voltage than V_th and V_{GS (off)} requires lower
voltage than V_th.
(Relationship can be established as follows: V_{GS (off)} < V_th < V_{GS (ON)})
Please take this into consideration for using the device.
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