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SSM3K02T Datasheet, PDF (1/2 Pages) Toshiba Semiconductor – High Speed Switching Applications | |||
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SMD Type
⢠Small package
⢠Low on resistance: Ron = 200 m⦠(max) (VGS = 4 V)
: Ron = 250 m⦠(max) (VGS = 2.5 V)
⢠Low gate threshold voltage: Vth = 0.6~1.1 V (VDS = 3 V, ID = 0.1 mA)
Product specification
SSM3K02T
Unit: mm
Absolute Maximum Ratings (Ta = 25°C)
Characteristics
Symbol
Rating
Unit
Drain-source voltage
VDS
30
V
Gate-source voltage
VGSS
±10
V
Drain current
DC
Pulse
ID
2.5
A
IDP
5.0
Drain power dissipation (Ta = 25°C)
PD
1250
mW
(Note 1)
Channel temperature
Storage temperature range
Tch
150
°C
Tstg
â55~150
°C
Note:
Using continuously under heavy loads (e.g. the application of
high temperature/current/voltage and the significant change in
temperature, etc.) may cause this product to decrease in the
Weight: 0.01 g (typ.)
reliability significantly even if the operating conditions (i.e.
operating temperature/current/voltage, etc.) are within the absolute maximum ratings.
Please design the appropriate reliability upon reviewing the TY Semiconductor Reliability Handbook
(âHandling Precautionsâ/âDerating Concept and Methodsâ) and individual reliability data (i.e. reliability test
report and estimated failure rate, etc).
Note 1:
Mounted on FR4
(25.4 mm à 25.4
board
mm à 1.6
t,
Cu
pad:
645
mm2,
t
=
10
s)
Note 2: The pulse width limited by max channel temperature.
Marking
3
Equivalent Circuit
3
KU
1
2
1
2
Handling Precaution
When handling individual devices (which are not yet mounted on a circuit board), be sure that the environment
is protected against electrostatic electricity. Operators should wear anti-static clothing, and containers and other
objects that come into direct contact with devices should be made of anti-static materials.
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