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| RYU002N05 Datasheet, PDF (2/2 Pages) Rohm – 0.9V Drive Nch MOSFET | |||
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Product specification
RYU002N05
ï¬ Electrical characteristics (Ta = 25ï°C)
Parameter
Symbol Min.
Gate-source leakage
IGSS
-
Drain-source breakdown voltage V (BR)DSS 50
Zero gate voltage drain current
IDSS
-
Gate threshold voltage
VGS (th)
0.3
-
Static drain-source on-state
resistance
-
RDS (on*)
-
-
Forward transfer admittance
Input capacitance
Output capacitance
Reverse transfer capacitance
Turn-on delay time
Rise time
Turn-off delay time
Fall time
-
l Yfs l* 0.2
Ciss
-
Coss
-
Crss
-
td(on)*
-
tr *
-
td(off)*
-
tf *
-
*Pulsed
Typ.
-
-
-
-
1.6
1.7
2.0
2.2
3.0
-
26
6
3
5
8
17
43
Max.
ï±10
-
1
0.8
2.2
2.4
2.8
3.3
9.0
-
-
-
-
-
-
-
-
Unit
Conditions
ïA VGS=ï±8V, VDS=0V
V ID=1mA, VGS=0V
ïA VDS=50V, VGS=0V
V VDS=10V, ID=1mA
ID=200mA, VGS=4.5V
ID=200mA, VGS=2.5V
ï ID=200mA, VGS=1.5V
ID=100mA, VGS=1.2V
ID=10mA, VGS=0.9V
S ID=200mA, VDS=10V
pF VDS=10V
pF VGS=0V
pF f=1MHz
ns ID=100mA, VDD 25V
ns VGS=4.5V
ns RL=250ï
ns RG=10ï
ï¬Body diode characteristics (Source-Drain) (Ta = 25ï°C)
Parameter
Symbol Min.
Typ.
Forward Voltage
VSD *
-
-
*Pulsed
Max. Unit
Conditions
1.2
V Is=200mA, VGS=0V
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