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| RYU002N05 Datasheet, PDF (1/2 Pages) Rohm – 0.9V Drive Nch MOSFET | |||
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Product specification
RYU002N05
ï¬ Structure
TY N-channel MOSFET
ï¬ Dimensions (Unit : mm)
ï¬Features
1) High speed switing.
2) Small package(UMT3).
3)Ultra low voltage drive(0.9V drive).
ï¬ Application
Switching
(2) (1)
Abbreviated symbol : QJ
ï¬ Packaging specifications
Package
Type Code
Basic ordering unit (pieces)
RYU002N05
Taping
T306
3000
ï¡
ï¬ Inner circuit
(3)
ï¬ Absolute maximum ratings (Ta = 25ï°C)
Parameter
Symbol
Limits
Unit
Drain-source voltage
Gate-source voltage
Drain current
Source current
(Body Diode)
Power dissipation
Channel temperature
Continuous
Pulsed
Continuous
Pulsed
VDSS
50
V
VGSS
ï±8
V
ID
ï±200
mA
IDP *1
ï±800
mA
IS
150
mA
ISP *1
800
mA
PD *2
200
mW
Tch
150
ï°C
Range of storage temperature
Tstg ï55 to ï«150 ï°C
*1 Pwï£10ïs, Duty cycleï£1%
*2 Each terminal mounted on a recommended land.
(2)
(1)
(1) SOURCE
(2) GATE
(3) DRAIN
ï¬ Thermal resistance
Parameter
Channel to Ambient
* Each terminal mounted on a recommended land.
Symbol
Rth (ch-a)*
Limits
625
Unit
ï°C / W
http://www.twtysemi.com
sales@twtysemi.com
4008-318-123
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