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| PZT2222A Datasheet, PDF (2/2 Pages) NXP Semiconductors – NPN switching transistor | |||
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Electrical Characteristics Ta = 25
Parameter
Collector cutoff current
Emitter cutoff current
DC current gain
collector-emitter saturation voltage
base-emitter saturation voltage
Collector capacitance
Emitter capacitance
Turn-on time
Delay time
Rise time
Turn-off time
Storage time
Fall time
Transition frequency
* Pulse test: tp 300 ìs; ä 0.02.
â Marking
Marking
2222A
Product specification
PZT2222A
Symbol
Testconditons
ICBO
IE = 0; VCB = 60 V
IE = 0; VCB = 60 V; Tj = 125
IEBO IC = 0; VEB = 5 V
IC = 0.1 mA; VCE = 10 V
IC = 1 mA; VCE = 10 V
IC = 10 mA; VCE = 10 V
hFE IC = 10 mA; VCE = 10 V;Ta = -55
IC = 150 mA; VCE = 1 V *
IC = 150 mA; VCE = 10 V *
IC = 500 mA; VCE = 10 V *
VCEsat
VBEsat
Cc
Ce
ton
IC = 150 mA; IB = 15 mA
IC = 500 mA; IB = 50 mA
IC = 150 mA; IB = 15 mA
IC = 500 mA; IB = 50 mA
IE = iE = 0; VCB = 10 V; f = 1 MHz
IC = iC = 0; VEB = 500 mV; f = 1 MHz
ICon = 150 mA; IBon = 15 mA;
IBoff = -15 mA
td
tr
toff
ts
tf
fT
IC = 20 mA; VCE = 20 V; f = 100 MHz
Min Typ Max Unit
10 nA
10
A
10 nA
35
50
75
35
50
100
300
40
300 mV
1
V
0.6
1.2
V
2
V
8
pF
25 pF
35 ns
10 ns
25 ns
250 ns
200 ns
60 ns
300
MHz
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