PZT2222A Datasheet, PDF (1/2 Pages) NXP Semiconductors – NPN switching transistor

Product specification
PZT2222A
Features
High current (max. 600 mA)
Low voltage (max.40 V).
SOT-223
6.50+0.2
-0.2
Unit: mm
3.50^+0.2
-0.2
3.00+0.1
-0.1
4
1
2
3
2.9
4.6
0.70+0.1
-0.1
0.90+0.2
-0.2
7.00+0.3
-0.3
1 Base
2 Collector
3 Emitter
4 Collector
Absolute Maximum Ratings Ta = 25
Parameter
Symbol
Rating
Unit
Collector-base voltage
VCBO
75
V
Collector-emitter voltage
VCEO
40
V
Emitter-base voltage
VEBO
6
V
Collector current
IC
600
mA
Peak collector current
ICM
800
mA
Peak base current
IBM
200
mA
Total power dissipation Ta 25
Ptot
1
W
Storage temperature
Tstg
-65 to +150
Junction temperature
Tj
150
Operating ambient temperature
Tamb
-65 to +150
Thermal resistance from junction to ambient
Rth(j-a)
109
K/W
Thermal resistance from junction to soldering point
Rth(j-s)
28
K/W
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