PMN50XP Datasheet, PDF (2/2 Pages) NXP Semiconductors – P-channel TrenchMOS extremely low level FET

Product specification
PMN50XP
3. Ordering information
Table 2: Ordering information
Type number
Package
Name
Description
PMN50XP
TSOP6
plastic surface mounted package (TSOP6); 6 leads
4. Limiting values
Table 3: Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol
Parameter
Conditions
V_DS
V_DGR
V_GS
I_D
I_DM
P_tot
drain-source voltage
drain-gate voltage (DC)
gate-source voltage
drain current
peak drain current
total power dissipation
25 °C ≤ T_j ≤ 150 °C
25 °C ≤ T_j ≤ 150 °C; R_GS = 20 kΩ
T_sp = 25 °C; V_GS = −4.5 V; see Figure 2 and 3
T_sp = 100 °C; V_GS = −4.5 V; see Figure 2
T_sp = 25 °C; pulsed; t_p ≤ 10 µs; see Figure 3
T_sp = 25 °C; see Figure 1
T_stg
storage temperature
T_j
junction temperature
Source-drain diode
I_S
source current
T_sp = 25 °C
I_SM
peak source current
T_sp = 25 °C; pulsed; t_p ≤ 10 µs
Version
SOT457
Min
Max Unit
-
−20
V
-
−20
V
-
±12
V
-
−4.8 A
-
−3
A
-
−19.4 A
-
2.2
W
−55
+150 °C
−55
+150 °C
-
−1.9 A
-
−7.5 A
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