PMN50XP Datasheet, PDF (1/2 Pages) NXP Semiconductors – P-channel TrenchMOS extremely low level FET

Product specification
PMN50XP
1. Product profile
1.1 General description
P-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using
TrenchMOS technology.
1.2 Features
s Low threshold voltage
s Low on-state losses
1.3 Applications
s Low power DC-to-DC converters
s Load switching
s Battery management
s Battery powered portable equipment
1.4 Quick reference data
s V_DS ≤ −20 V
s R_DSon ≤ 60 mΩ
s I_D ≤ −4.8 A
s Q_GD = 1.3 nC (typ)
2. Pinning information
Table 1:
Pin
1, 2, 5, 6
3
4
Pinning
Description
drain (D)
gate (G)
source (S)
Simplified outline
654
123
SOT457 (TSOP6)
Symbol
D
G
S
003aaa671
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[e-mail]
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