MMBT2907 Datasheet, PDF (2/2 Pages) Samsung semiconductor – PNP (GENERAL PURPOSE TRANSISTOR)

Product specification
■ Electrical Characteristics Ta = 25℃
Parameter
Collector-Base Breakdown Voltage
Collector-Emitter Breakdown Voltage*
Emitter-Base Breakdown Voltage
Collector cut-off current
Emitter cut-off current
DC Current Gain
Collector-Emitter Saturation Voltage*
Base-Emitter Saturation Voltage
Current Gain - Bandwidth Product
Output Capacitance
Input Capacitance
Turn-on Time
Delay Time
Rise Time
Turn-off Time
Storage Time
Fall Time
Symbol
V(BR)CBO
V(BR)CEO
V(BR)EBO
ICBO
IEBO
hFE
VCE(sat)
VBE(sat)
fT
Cobo
Cibo
ton
td
tr
toff
ts
tf
Test conditons
IC = -10 μA, IE = 0
IC = -10 mA, IB = 0
IE = -10μA, IC = 0
VCB=-50V IE=0
VCE=-3V IC=0
IC = -0.1 mA, VCE = -10 V
IC = -1.0 mA, VCE = -10 V
IC = -10 mA, VCE = -10 V
IC = -150 mA, VCE = -10 V
IC = -500 mA, VCE = -10 V
IC = -150 mA, IB = -15 mA
IC = -500 mA, IB = -50 mA
IC = -150 mA, IB = -15 mA
IC = -500 mA, IB = -50 mA
IC = -50 mA, VCE = -20 V,f = 100 MHz
VCB = -10 V, IE = 0,f = 100 kHz
VEB = -2.0 V, IC = 0,f = 100 kHz
VCC = -30 V, IC = -150 mA,IB1 = -15 mA
VCC = -6.0 V, IC = -150 mA,IB1 = IB2 = -15
mA
MMBT2907
Min Max Unit
-60
V
-40
V
-5
V
-100 nA
-100 nA
35
50
75
100 300
30
-0.4 V
-1.6 V
-1.3 V
-2.6 V
200
MHz
8.0 pF
30 pF
45 ns
10 ns
40 ns
100 ns
80 ns
30 ns
■ Marking
Marking
M2B
http://www.twtysemi.com
[e-mail]
4008-318-123
2 of 2