MMBT2907 Datasheet, PDF (1/2 Pages) Samsung semiconductor – PNP (GENERAL PURPOSE TRANSISTOR)

■ Features
● Collector Current to Continuous :IC=-600mA
● Power Dissipation :PD=250mW
Product specification
MMBT2907
SOT-23
2.9+0.1
-0.1
0.4+0.1
-0.1
3
1
2
0.95+0.1
-0.1
1.9^+0.1
-0.1
Unit: mm
0.1+0.05
-0.01
1.Base
2.Emitter
3.collector
■ Absolute Maximum Ratings Ta = 25℃
Parameter
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current - Continuous
Total Device Dissipation
Thermal Resistance, Junction to Ambient
Operating and Storage Junction Temperature Range
Symbol
VCBO
VCEO
VEBO
IC
PD
RθJA
TJ, Tstg
Rating
-60
-40
-5
-600
250
500
-55 to +150
Unit
V
V
V
mA
mW
℃/ W
℃
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