HN1K06FU Datasheet, PDF (2/2 Pages) Toshiba Semiconductor – Field Effect Transistor Silicon N Channel MOS Type

Equivalent Circuit (top view)
6
5
4
Q1
Q2
Marking
Product specification
HN1K06FU
654
KJ
1
2
3
(Q1, Q2 common)
Switching Time Test Circuit
(a) Test circuit
2.5 V
IN
0
10 ms
V_IN
I_D
OUT V_DD = 3 V
D.U. ^<= 1%
V_IN: t_r, t_f < 5 ns
(Z_out = 50 W)
Common Source
V_{DD Ta = 25°C}
123
(b) V_IN
VGS
(c) V_OUT
VDS
2.5 V
0
V_DD
10%
90%
10%
V_{DS (ON)}
90%
t_r
t_f
t_on
t_off
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