HN1K06FU Datasheet, PDF (1/2 Pages) Toshiba Semiconductor – Field Effect Transistor Silicon N Channel MOS Type

Product specification
HN1K06FU
Unit: mm
· High input impedance and extremely low drive current.
· Vth is low and it is possible to drive directly at low-voltage CMOS.
: Vth = 0.5 to 1.5 V
· Switching speed is fast.
· Suitable for high-density mounting because of a compact package
Maximum Ratings (Ta = 25°C) (Q1, Q2 common)
Characteristics
Drain-source voltage
Gate-source voltage
Drain current
Drain power dissipation
Channel temperature
Storage temperature range
Note: TOTAL rating
Symbol
Rating
Unit
V_DS
20
V
V_GSS
10
V
I_D
100
mA
P_D (Note)
200
mW
T_ch
150
°C
T_stg
-55 to 150
°C
Electrical Characteristics (Ta = 25°C) (Q1, Q2 common)
Weight: 6.8 mg
Characteristic
Gate leakage current
Drain-source breakdown voltage
Drain cut-off current
Gate threshold voltage
Forward transfer admittance
Drain-source ON resistance
Input capacitance
Reverse transfer capacitance
Output capacitance
Switching time
Symbol
Test Condition
I_GSS
V _{(BR) DSS}
I_DSS
V_th
ïY_fsï
R_{DS (ON)}
C_iss
C_rss
C_oss
t_on
t_off
V_GS = 10 V, V_DS = 0 V
I_D = 100 mA, V_GS = 0 V
V_DS = 20 V, V_GS = 0 V
V_DS = 3 V, I_D = 0.1 mA
V_DS = 3 V, I_D = 10 mA
I_D = 10 mA, V_GS = 2.5 V
V_DS = 3 V, V_GS=0 V, f = 1 MHz
V_DS = 3 V, V_GS=0 V, f = 1 MHz
V_DS = 3 V, V_GS=0 V, f = 1 MHz
V_DD = 3 V, I_D = 10 mA,
V_GS = 0 to 2.5 V
V_DD = 3 V, I_D = 10 mA,
V_GS = 0 to 2.5 V
Min Typ. Max Unit
¾
¾
1
mA
20
¾
¾
V
¾
¾
1
mA
0.5
¾
1.5
V
35
62
¾
mS
¾
3.5
6.0
W
¾
14
¾
pF
¾
5.3
¾
pF
¾
16
¾
pF
¾ 0.28 ¾
ms
¾ 0.34 ¾
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