HN1B04FU Datasheet, PDF (2/2 Pages) Toshiba Semiconductor – NPN EPITAXIAL TYPE (AUDIO FREQUENCY GENERAL PURPOSE AMPLIFIER APPLICATIONS)

Q2 Absolute Maximum Ratings (Ta = 25°C)
Product specification
HN1B04FU
Equivalent Circuit (Top View)
Characteristic
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Base current
Symbol
V_CBO
V_CEO
V_EBO
I_C
I_B
Rating
Unit
−50
V
−50
V
−5
V
−150
mA
−30
mA
Q1,Q2 Common Absolute Maximum Ratings (Ta = 25°C)
Characteristic
Symbol
Rating
Unit
Collector power dissipation
P_C*
200
mW
Junction temperature
T_j
125
°C
Storage temperature range
T_stg
−55~125
°C
Note:
Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the
significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even
if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum
ratings.
Please design the appropriate reliability upon reviewing the TY Semiconductor Reliability Handbook
(“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test
report and estimated failure rate, etc).
* Total rating
Q1 Electrical Characteristics (Ta = 25°C)
Characteristic
Collector cut-off current
Emitter cut-off current
DC current gain
Collector-emitter
saturation voltage
Transition frequency
Collector output capacitance
Symbol
I_CBO
I_EBO
h_{FE (Note)}
Test
Circuit
Test Condition
― V_CB = 60V, I_E = 0
― V_EB = 5V, I_C = 0
― V_CE = 6V, I_C = 2mA
V_{CE (sat)}
― I_C = 100mA, I_B = 10mA
f_T
― V_CE = 10V, I_C = 1mA
C_ob
―
V_CB = 10V, I_E = 0,
f = 1MHz
Min Typ. Max Unit
―
―
0.1 μA
―
―
0.1 μA
120
―
400
―
0.1 0.25 V
―
150
― MHz
―
2
―
pF
Q2 Electrical Characteristics (Ta = 25°C)
Characteristic
Symbol
Test
Circuit
Test Condition
Collector cut-off current
I_CBO
― V_CB = −50V, I_E = 0
Emitter cut-off current
I_EBO
― V_EB = −5V, I_C = 0
DC current gain
h_{FE (Note)}
― V_CE = −6V, I_C = −2mA
Collector-emitter
saturation voltage
V_{CE (sat)}
― I_C = −100mA, I_B = −10mA
Transition frequency
Collector output capacitance
f_T
― V_CE = −10V, I_C = −1mA
C_ob
―
V_CB = −10V, I_E = 0,
f = 1MHz
Note: hFE Classification Y (Y): 120~240, GR (G): 200~400
( ) Marking Symbol
Min Typ. Max Unit
―
― −0.1 μA
―
― −0.1 μA
120
―
400
― −0.1 −0.3 V
―
120
― MHz
―
4
―
pF
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