HN1B04FU Datasheet, PDF (1/2 Pages) Toshiba Semiconductor – NPN EPITAXIAL TYPE (AUDIO FREQUENCY GENERAL PURPOSE AMPLIFIER APPLICATIONS)

Audio Frequency General Purpose Amplifier Applications
Q1:High voltage and high current
: VCEO = 50V, IC = 150mA (max)
z High hFE : hFE = 120~400
z Excellent hFE linearity
: hFE (IC = 0.1mA) / hFE (IC = 2mA) = 0.95 (typ.)
Q2:
z High voltage and high current
: VCEO = −50V, IC = −150mA (max)
z High hFE : hFE = 120~400
z Excellent hFE linearity
: hFE (IC = −0.1mA) / hFE (IC = −2mA) = 0.95 (typ.)
Product specification
HN1B04FU
Unit: mm
Q1 Absolute Maximum Ratings (Ta = 25°C)
Characteristic
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Base current
Symbol
V_CBO
V_CEO
V_EBO
I_C
I_B
Rating
60
50
5
150
30
Weight: 6.8mg
Marking
Unit
V
V
V
mA
mA
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