HAT2053M Datasheet, PDF (2/3 Pages) Hitachi Semiconductor – Silicon N Channel Power MOS FET Power Switching

Absolute Maximum Ratings
Product specification
HAT2053M
Item
Symbol
Value
Drain to source voltage
Gate to source voltage
Drain current
Drain peak current
Body to drain diode reverse drain current
Channel dissipation
VDSS
VGSS
ID ^{Note 2}
ID (pulse) ^{Note 1}
IDR ^{Note 2}
Pch ^{Note 2}
Pch ^{Note 3}
20
±12
6.1
24.4
6.1
2.0
1.05
Channel temperature
Tch
150
Storage temperature
Tstg
–55 to +150
Notes: 1. PW ≤ 10 µs, duty cycle ≤ 1%
2. When using the alumina ceramic board (50 × 50 × 0.7 mm), PW ≤ 5 s, Ta = 25°C
3. When using the alumina ceramic board (50 × 50 × 0.7 mm), Ta = 25°C
(Ta = 25°C)
Unit
V
V
A
A
A
W
W
°C
°C
Electrical Characteristics
(Ta = 25°C)
Item
Symbol Min Typ Max Unit
Test Conditions
Drain to source breakdown voltage
Gate to source leak current
Zero gate voltage drain current
Gate to source cutoff voltage
Static drain to source on state resistance
Forward transfer admittance
Input capacitance
Output capacitance
Reverse transfer capacitance
V (BR) DSS
20
IGSS
—
IDSS
—
VGS (off)
0.4
RDS (on)
—
RDS (on)
—
|yfs|
6.0
Ciss
—
Coss
—
Crss
—
—
—
V ID = 10 mA, VGS = 0
— ±0.1 µA VGS = ±12 V, VDS = 0
—
1
µA VDS = 20 V, VGS = 0
— 1.4
V VDS = 10 V, ID = 1 mA
28
33
mΩ ID = 3 A, VGS = 4.5 V ^{Note 4}
37
48
mΩ ID = 3 A, VGS = 2.5 V ^{Note 4}
10
—
S
ID = 3 A, VDS = 10 V ^{Note 4}
570 —
pF VDS = 10 V
220 —
pF VGS = 0
160 —
pF ^{f = 1 MHz}
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Body to drain diode forward voltage
Body to drain diode reverse recovery time
Note: 4. Pulse test
td (on)
tr
td (off)
tf
VDF
trr
—
15
—
— 100 —
—
90
—
— 105 —
— 0.95 —
— (50) —
ns VGS = 4.5 V, ID = 3 A,
ns RL = 3.3 Ω
ns
ns
V
IF = 6.1 A, VGS = 0 ^{Note 4}
ns IF = 6.1 A, VGS = 0
diF/dt = 20 A/µs
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