HAT2053M Datasheet, PDF (1/3 Pages) Hitachi Semiconductor – Silicon N Channel Power MOS FET Power Switching

Product specification
HAT2053M
Features
• Low on-resistance
• Low drive current
• High density mounting
• 2.5 V gate drive device can be driven from 3 V source
Outline
(Package name: TSOP-6)
4
5
6
3
G
3
2
1
1256
DDDD
S
4
4
3
1, 2, 5, 6
Source
Gate
Drain
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