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FDN361BN Datasheet, PDF (2/2 Pages) Fairchild Semiconductor – 30V N-Channel, Logic Level, PowerTrench MOSFET
◁
SMD Type
Product specification
FDN361BN
Electrical Characteristics
Symbol
Parameter
TA = 25°C unless otherwise noted
Test Conditions
Min Typ Max Units
Off Characteristics
BVDSS
Drain–Source Breakdown Voltage VGS = 0 V,
ID = 250 μA
30
ΔBVDSS
ΔTJ
Breakdown Voltage Temperature
Coefficient
ID = 250 μA,Referenced to 25°C
IDSS
Zero Gate Voltage Drain Current
VDS = 24 V,
VGS = 0 V
VDS = 24 V, VGS = 0 V, TJ = 55°C
IGSS
Gate–Body Leakage
VGS = ±20 V, VDS = 0 V
On Characteristics (Note 2)
VGS(th)
Gate Threshold Voltage
RDS(on)
Static Drain–Source
On–Resistance
ID(on)
On–State Drain Current
gFS
Forward Transconductance
VDS = VGS,
ID = 250 μA
1
VGS = 10 V,
ID = 1.4 A
VGS = 4.5 V, ID = 1.2 A
VGS = 10 V, ID = 1.4 A, TJ = 125°C
VGS = 4.5 V, VDS = 5 V
3.5
VDS = 5 V,
ID = 1.4 A
Dynamic Characteristics
Ciss
Input Capacitance
Coss
Output Capacitance
Crss
Reverse Transfer Capacitance
RG
Gate Resistance
VDS = 15 V,
f = 1.0 MHz
V GS = 0 V,
VGS = 15 mV, f = 1.0 MHz
Switching Characteristics
td(on)
Turn–On Delay Time
tr
Turn–On Rise Time
td(off)
Turn–Off Delay Time
tf
Turn–Off Fall Time
Qg
Total Gate Charge
Qgs
Gate–Source Charge
Qgd
Gate–Drain Charge
(Note 2)
VDD = 15 V,
VGS = 10 V,
ID = 1 A,
RGEN = 6 Ω
VDS = 15 V,
VGS = 4.5 V
ID = 1.4 A,
Drain–Source Diode Characteristics
VSD
Drain–Source Diode Forward
Voltage
trr
Diode Reverse Recovery Time
Qrr
Diode Reverse Recovery Charge
VGS = 0 V, IS = 0.42 A (Note 2)
IF = 1.4 A, diF/dt = 100 A/µs
V
26
mV/°C
1
μA
10
μA
±100 nA
2.1
3
V
92 110 mΩ
120 160
114 150
A
4
S
145 193 pF
35 47
pF
15 23
pF
1.6
Ω
3
6
ns
8
16
ns
16 29
ns
2
4
ns
1.3 1.8
nC
0.5
nC
0.5
nC
0.8 1.2
V
11 22
nS
4
nC
Notes:
1. RθJA is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is defined as the solder mounting surface of
the drain pins. RθJC is guaranteed by design while RθCA is determined by the user's board design.
a) 250°C/W when mounted on a
0.02 in2 pad of 2 oz. copper.
b) 270°C/W when mounted on a
minimum pad.
Scale 1 : 1 on letter size paper
2. Pulse Test: Pulse Width ≤ 300 μs, Duty Cycle ≤ 2.0%
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