FDN361BN Datasheet, PDF (1/2 Pages) Fairchild Semiconductor – 30V N-Channel, Logic Level, PowerTrench MOSFET

SMD Type
Product specification
FDN361BN
General Description
These N-Channel Logic Level MOSFETs are produced
using Fairchild Semiconductor’s advanced
PowerTrench process that has been especially tailored
to minimize the on-state resistance and yet maintain
superior switching performance.
These devices are particularly suited for low voltage
applications in notebook computers, portable phones,
PCMCIA cards, and other battery powered circuits
where fast switching, and low in-line power loss are
needed in a very small outline surface mount package.
D
Features
• 1.8 A, 30 V.
R_DS(ON) = 110 mΩ @ V_GS = 10 V
R_DS(ON) = 160 mΩ @ V_GS = 4.5 V
• Low gate charge
• Industry standard outline SOT-23 surface mount
package using proprietary SuperSOT^TM-3 design for
superior thermal and electrical capabilities
• High performance trench technology for extremely
low RDS(ON)
D
S
SuperSOT^TM-3
G
Absolute Maximum Ratings T_A=25^oC unless otherwise noted
Symbol
V_DSS
V_GSS
I_D
Parameter
Drain-Source Voltage
Gate-Source Voltage
Drain Current – Continuous
– Pulsed
(Note 1a)
P_D
Power Dissipation for Single Operation
(Note 1a)
(Note 1b)
T_J, T_STG
Operating and Storage Junction Temperature Range
Thermal Characteristics
R_θJA
Thermal Resistance, Junction-to-Ambient
R_θJC
Thermal Resistance, Junction-to-Case
(Note 1a)
(Note 1)
Package Marking and Ordering Information
Device Marking
Device
Reel Size
361B
FDN361BN
7’’
G
S
Ratings
30
± 20
1.4
10
0.5
0.46
–55 to +150
250
75
Tape width
8mm
Units
V
V
A
W
°C
°C/W
Quantity
3000 units
http://www.twtysemi.com
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