CJ3400A Datasheet, PDF (2/3 Pages) ZP Semiconductor – SOT-23 Plastic-Encapsulate MOSFETS

Product specification
Electrical characteristics (T_a=25℃ unless otherwise noted)
Parameter
Symbol
Test Condition
Off Characteristics
Drain-source breakdown voltage
V(BR) DSS VGS = 0V, ID =250µA
Zero gate voltage drain current
IDSS
VDS =24V,VGS = 0V
Gate-source leakage current
IGSS
VGS =±12V, VDS = 0V
On characteristics (note 3)
Drain-source on-resistance
(note 3)
RDS(on)
VGS =10V, ID =5.8A
VGS =4.5V, ID =5A
VGS =2.5V,ID=4A
Forward tranconductance
gFS
VDS =5V, ID =5A
Gate threshold voltage
VGS(th) VDS =V_GS, ID =250µA
Dynamic Characteristics (note 4,5)
Input capacitance
Ciss
Output capacitance
Coss
VDS =15V,VGS =0V,f =1MHz
Reverse transfer capacitance
Crss
Gate resistance
Rg
VDS =0V,VGS =0V,f =1MHz
Switching Characteristics (note 4,5)
Turn-on delay time
td(on)
Turn-on rise time
Turn-off delay time
tr
td(off)
V_GS=10V,V_DS=15V,
R_L=2.7Ω,R_GEN=3Ω
Turn-off fall time
tf
Drain-source diode characteristics and maximum ratings
Diode forward voltage (note 3)
V_SD
I_S=1A,V_GS=0V
Note :
1. Repetitive Rating : Pulse width limited by maximum junction temperature.
2. Surface Mounted on FR4 Board, t < 5 sec.
3. Pulse Test : Pulse Width≤300µs, Duty Cycle ≤ 2%.
4. Guaranteed by design, not subject to production testing.
Min Typ Max Units
30
V
1
µA
±100 nA
32 mΩ
38 mΩ
45 mΩ
8
S
0.7
1.4
V
1155 pF
108
pF
84
pF
3.6
Ω
5
ns
7
ns
40
ns
6
ns
1
V
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