CJ3400A Datasheet, PDF (1/3 Pages) ZP Semiconductor – SOT-23 Plastic-Encapsulate MOSFETS

Product specification
SOT-23 Plastic-Encapsulate MOSFETS
CJ3400A N-Channel Enhancement Mode Field Effect Transistor
FEATURE
z High dense cell design for extremely low R_DS(ON)
z Exceptional on-resistance and maximum DC current capability
MARKING: R0A
SOT-23
1. GATE
2. SOURCE
3. DRAIN
Maximum ratings ( T_a=25℃ unless otherwise noted)
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current
Drain Current-Pulsed (note 1)
Power Dissipation
Thermal Resistance from Junction to Ambient (note 2)
Junction Temperature
Storage Temperature
Symbol
V_DS
V_GS
I_D
I_DM
P_D
R_θJA
T_J
T_STG
Value
30
±12
5.8
30
400
313
150
-55~+150
Unit
V
V
A
A
mW
℃/W
℃
℃
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