BCV62 Datasheet, PDF (2/3 Pages) NXP Semiconductors – PNP general purpose double transistor

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TraMnDOsioiSsdtFoeErssT
Product specification
BCV62
■ Electrical Characteristics Ta = 25℃
Parameter
Transistor TR1
Collector-Base Breakdown Voltage
Collector-Emitter Breakdown Voltage
Emitter-Base Breakdown Voltage
Collector cutoff current
Emitter cutoff current
DC current gain
collector-emitter saturation voltage *
base-emitter saturation voltage *
Collector capacitance
Transition frequency
Noise figure
Transistor TR2
Base-emitter forward voltage
DC current gain
BCV62A
BCV62B
BCV62C
Symbol
Test conditions
Min Typ Max Unit
V(BR)CBO IC = -10 μA, IE = 0
-30
V(BR)CEO IC = -10 mA, IB = 0
-30
V(BR)EBO IC = -10 μA, IC = 0
-6
ICBO VCB=-30V, IE=0
IEBO VEB=-5V, IC=0
VCE=-5V, IC= -100μA
100
hFE
VCE=-5V, IC=-2mA
100
IC = -10 mA; IB = -0.5 mA
VCE(sat)
IC = -100 mA; IB = -5 mA
VBE(sat)
Cc
fT
F
IC = -10 mA; IB = -0.5 mA
IC = -100 mA; IB = -5 mA
IE = ie = 0; VCB = -10 V; f = 1 MHz
IC = -10 mA; VCE = -5 V; f = 100 MHz
100
IC =-200μA; VCE =-5 V; RS =2kΩ; f = 1 kHz;
B = 200 Hz
-15
-100
800
-0.3
-0.65
-0.7
-0.85
4.5
10
V
V
V
nA
nA
V
V
V
V
pF
MHz
dB
VEBS
VCB = 0; IE = 250 mA
VCB = 0; IE = 10μA
hFE IC = -2 mA; VCE = -5 V
1.5 V
0.4
mV
125
250
220
475
420
800
* pulse test: Pulse Width ≤300μs, Duty Cycle≤ 2.0%.
■ Marking
TYPE
Marking
BCV61
3MP
BCV61A
3JP
BCV61B
3KP
BCV61C
3LP
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